Electrical isolation of a silicon δ-doped layer in GaAs by ion irradiation

Electrical isolation of p-type GaAs layers by ion irradiation

A photoluminescence study of δ-doped GaAs

Samples of GaAs 8-doped with beryllium have been studied with photoluminescence. With a lightly doped sample, (2 x 1016 Be atoms per m2) a spectral feature is observed which can be interpreted as caused by radiative recombinations between spatially non-confined conductionband electrons and acceptor-related holes forming a miniband system confined spatially to the &doped region. With higher dens...

Electrical isolation of GaN by MeV ion irradiation

Equilibrium Bandstructure of a Phosphorus δ-doped Layer in Silicon using a Tight-binding Approach

Emerging STM technology opens the possibility of creating ultra-high doped silicon devices. For the theoretical analysis of Si:P QW devices, an atomistic tight-binding approach with self-consistent potential calculation is used. Fermi-level, 1Γ, 2Γ and 1∆ bands are of the same order with previous studies. Impurity bands can be simply explained by the band projection of silicon bulk bandstructur...

DIFFUSION OF SILICON IN ION IMPLANTED GaAs

Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...